Charge profile of surface doped C60
نویسندگان
چکیده
منابع مشابه
Charge profile of surface doped C 60
We study the charge profile of a C60-FET (field effect transistor) as used in the experiments of Schön, Kloc and Batlogg. Using a tight-binding model, we calculate the charge profile treating the Coulomb interaction in a mean-field approximation. At low doping, the charge profile behaves similarly to the case of a continuous space-charge layer and becomes confined to a single interface layer fo...
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ژورنال
عنوان ژورنال: The European Physical Journal B
سال: 2001
ISSN: 1434-6028
DOI: 10.1007/s100510170054